Majority Carrier Mobility of Compensated Silicon: Comparison of Room Temperature Measurements and Models

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• 作者：Song Zhang^a ; ^{song.zhang@ntnu.no" class="auth_mail" title="E-mail the corresponding author} ; Chiara Modanese^a ; ^b ; Guilherme Gaspar^a ; Rune Sø ; ndenå ; ^c ; Gabriella Tranell^a ; Marisa Di Sabatino^a
• 关键词：Mobility ; Models ; Compensation ; Defects.
• 刊名：Energy Procedia
• 出版年：2016
• 出版时间：August 2016
• 年：2016
• 卷：92
• 期：Complete
• 页码：278-283
• 全文大小：220 K

文摘

In this work the measured majority carrier mobility in compensated silicon is compared to values predicted by two different models: Klaassen's model for conventional silicon and the more recent unified model for compensated silicon by Schindler et al (Schindler's model). The purpose of the comparison is to broaden the range of materials included in the newly developed model for compensated materials. As observed previously, the deviation of the prediction by Klaassen's model from the experimental data increases with increasing compensation ratio, R_C. It is observed that above a critical R_C value (R_C > 5.5) the deviation from the measured values is lower for Schindler's model. Occasionally high deviations are observed, which are believed to be related to unusually high defect density of the samples, e.g. defects related to light elements (oxygen and carbon) or metal impurities. Such impurities may contribute considerably to the ionized impurity concentration. Therefore, it is suggested that knowledge of additional parameters to the doping concentration is needed in order to increase the accuracy of Schindler's model.