Using nanoindentation and cathodoluminescence to identify the bundled effect of gallium nitride grown by PA-MBE

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• 作者：Hua-Chiang Wen^a ; ^{a091316104@gmail.com} ; Wu-Ching Chou^a ; ^{wuchingchou@mail.nctu.edu.tw} ; Tun-Yuan Chiang^b ; Yeau-Ren Jeng^c ; Wen-Chung Fan^a
• 关键词：Molecular beam epitaxy ; Gallium nitride ; Desorption ; Cathodoluminescence
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：5 February 2017
• 年：2017
• 卷：693
• 期：Complete
• 页码：615-621
• 全文大小：1640 K
• 卷排序：693

文摘

We evaluated the bundled NC to transit single NC Using nanoindentation and CL. The 5 meV of NBE blueshift for bundled NC to single NC. The changeable H and E are due to responses of bonding forces of bundled NC. TG plays a dominant role as GaN bundled separated into single hexagonal NC.