Comparison of models for silicon etching in CF₄?+?O₂ plasma

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• 作者：R. Knizikevi?ius
• 关键词：CF4 + O2 plasma ; Silicon ; Plasma chemical etching ; Site-balance model ; Adsorbed-layer model
• 刊名：Vacuum
• 出版年：2012
• 出版时间：20 July, 2012
• 年：2012
• 卷：86
• 期：12
• 页码：1964-1968
• 全文大小：424 K

文摘

The plasma chemical etching (PCE) of Si in CF₄?+?O₂ plasma is considered. The concentrations of plasma components are calculated using values extrapolated from experimental data. Resulting calculations of plasma components are used for the calculation of Si etching rates. The concentrations of the adsorbed layer and surface components, obtained from analysis of PCE of silicon, are used for the comparison of site-balance and adsorbed-layer models. It is found that adsorbed-layer model predicts higher concentration of SiO₂ molecules on the surface than site-balance model. The difference in SiO₂ concentration is important during ion-beam-assisted etching and reactive ion etching processes as the models predict different etching rates due to different sputtering yields of Si atoms and SiO₂ molecules.