文摘
Micrometer boron nitride/polyamide acid (mBN/PAA) compound was firstly fabricated via in-situ polymerization, performed to obtain the mBN/PAA electrospun fibers by electrospinning technology, finally to fabricate the dielectric thermally conductive mBN/polyimide (mBN/PI) composites via thermal-imidization followed by hot press method. The obtained mBN/PI composite with 30 wt% mBN presents relatively highly thermally conductive coefficient (λ), excellent dielectric constant (ε) & dielectric loss tangent (tan δ), and extremely outstanding thermal stability, λ of 0.696 W/m K, ε of 3.77, tan δ of 0.007, THeat-resistance index (THRI) of 279 °C and glass transition temperature (Tg) of 240 °C, which presents a great potential for packaging in integration and miniaturization of microelectronic devices.