p-Si(1 1 1):H/ionic liquid interface investigated through a combination of electrochemical measurements and reflection high energy electron diffraction surface analysis in vacuum
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- 作者：Ko Watanabe ; Shingo Maruyama ; Yuji Matsumoto ; matsumoto@atomol.che.tohoku.ac.jp" class="auth_mail" title="E-mail the corresponding author
- 关键词：Interface ; Ionic liquid ; Semiconductor ; Electrochemistry ; RHEED ; Vacuum
- 刊名：Chemical Physics Letters
- 出版年：2016
- 出版时间：1 July 2016
- 年：2016
- 卷：655-656
- 期：Complete
- 页码：6-10
- 全文大小：1082 K
文摘
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Combination study of electrochemical and RHEED experiments in vacuum is proposed.
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Semiconductor characterizations of p-Si(1 1 1):H is electrochemically made in IL.
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Specific adsorption of IL molecular ions scarcely occurs on p-Si(1 1 1):H.
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The p-Si(1 1 1):H/IL interface is stable in vacuum.
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The electric double layer capacitance of IL for p-Si(1 1 1):H is small.