刊名:Journal of Electrical Systems and Information Technology
出版年:2016
出版时间:September 2016
年:2016
卷:3
期:2
页码:210-216
全文大小:852 K
文摘
Double patterning photolithography (DPL) is considered one of the best solutions used for enabling 32 nm/22 nm technology. In this paper, we propose a new technique for double patterning post decomposition conflict resolution. The algorithm is based on lines positions encoding followed by code pattern matching. Experimental results show that the usage of encoded patterns decreases the time needed for pattern matching and increases the matching accuracy. The overall manual problem solution time is reduced to about 1%.