Transparent conductive Mg and Ga co-doped ZnO thin films for solar cells grown by magnetron sputtering: H2 induced changes
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- 作者：Cong-sheng Tiana ; b ; c ; Xin-liang Chena ; b ; c ; cxlruzhou@163.com" class="auth_mail ; Jian Nia ; b ; c ; Jie-ming Liua ; b ; c ; De-kun Zhanga ; b ; c ; Qian Huanga ; b ; c ; Ying Zhaoa ; b ; c ; Xiao-dan Zhanga ; b ; c
- 关键词：ZnO thin films ; Magnetron sputtering ; Mg and Ga co-doping ; H2 introduction ; Band gap widening ; Solar cells
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：June 2014
- 年：2014
- 卷：125
- 期：Complete
- 页码：59-65
- 全文大小：1667 K
文摘
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Hydrogenated Mg and Ga co-doped ZnO (HMGZO) films were deposited by magnetron sputtering.
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Electrical properties of ZnO films were improved with H2 introduction.
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Optical band gap of HMGZO films varied from 3.43 eV to 3.66 eV.
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Electron mobility of HMGZO films was enhanced after vacuum annealing.
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Single junction a-Si:H solar cell on HMGZO layer with an efficiency of 8.2% was obtained.