A distributed, compact MOSFET model for circuit-level ESD simulation includes a snapback model for each finger and a body resistance network to capture the non-constant body potential.

A distributed model allows each finger to be biased differently from the others, resulting in better reproducibility of the ESD characteristics and pulsed I-V characteristic scaling with respect to the number of fingers and finger width;

Non-uniform turn-on and non-uniform self-heating among the device fingers can be simulated.

TCAD simulation confirms that the device fingers may carry unequal currents and have different temperatures; these effects are captured by the compact model.