Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors
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- 作者：G. Maggionia ; b ; maggioni@lnl.infn.it" class="auth_mail" title="E-mail the corresponding author ; S. Carturana ; b ; L. Fioreseb ; c ; N. Pintod ; e ; F. Caprolid ; e ; D.R. Napolib ; M. Giarolaf ; G. Mariottof
- 关键词：Germanium nitride layer ; Germanium oxynitride layer ; Room temperature deposition ; Electrical resistivity ; Surface passivation ; Hyperpure germanium detector
- 刊名：Applied Surface Science
- 出版年：2017
- 出版时间：30 January 2017
- 年：2017
- 卷：393
- 期：Complete
- 页码：119-126
- 全文大小：1202 K
文摘
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A surface passivation method for HPGe radiation detectors is proposed.
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Highly insulating GeNx- and GeOxNy-based layers are deposited at room temperature.
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Deposition parameters affect composition and electrical properties of the layers.
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The improved performance of a GeNx-coated HPGe diode is assessed.