Preparation of highly oriented β-SiC bulks by halide laser chemical vapor deposition

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• 作者：Hong Cheng^a ; Rong Tu^a ; Song Zhang^a ; ^{superkobe0104@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Mingxu Han^b ; Takashi Goto^c ; Lianmeng Zhang^a
• 关键词：β-SiC ; Preferred orientation ; Halide laser CVD (HLCVD) ; Microstructure ; Deposition rate (Rdep)
• 刊名：Journal of the European Ceramic Society
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：37
• 期：2
• 页码：509-515
• 全文大小：4439 K

文摘

Highly oriented β-SiC bulks with high hardness were fabricated by halide laser chemical vapor deposition (HLCVD) using SiCl₄, CH₄ and H₂ as precursors. The effects of total pressure (P_tot) and deposition temperature (T_dep) on the preferred orientation, microstructure, deposition rate (R_dep) and micro-hardness were investigated. The 〈110〉-oriented β-SiC bulks were obtained at low P_tot (2–4 kPa), non-oriented β-SiC bulks were obtained at mediate P_tot (6 kPa), and 〈111〉-oriented β-SiC bulks were obtained at high P_tot (10–40 kPa), exhibiting faceted, cauliflower-like and six-fold pyramid-like microstructure, respectively. The maximum R_dep of 〈111〉- and 〈110〉-oriented β-SiC bulks were 3600 and 1300 μm/h at, respectively. The activation energy obtained by the plot of lgR_dep-T_dep⁻¹ is 170 to 280 kJ mol⁻¹, showing an exponential relation with P_Si. The Vickers micro-hardness of β-SiC bulks increased with increasing P_tot and showed the highest value of 35 GPa at P_tot = 40 kPa with a complete 〈111〉 orientation.