Characterization of M-plane GaN thin films grown on misoriented γ-LiAlO2 (100) substrates
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- 作者：Yu-Chiao Lina ; Ikai Loa ; ikailo@mail.phys.nsysu.edu.tw" class="auth_mail" title="E-mail the corresponding author ; Ying-Chieh Wanga ; Chen-Chi Yanga ; Chia-Hsuan Hua ; Mitch M.C. Choua ; D.M. Schaadtb
- 关键词：M-plane GaN ; Molecular beam epitaxy ; LiAlO2
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：15 September 2016
- 年：2016
- 卷：450
- 期：Complete
- 页码：197-202
- 全文大小：1619 K
文摘
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class="boldFont">M-plane GaN films were grown on misoriented LAO by a two-step growth method.
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The crystalline quality was improved by the two-step growth method.
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Δεzz increased and Δεxx decreased as the crystal quality was improved.