Cu content dependence of morphological, structural and optical properties for Cu2ZnGeS4 thin films synthesized by sulfurization of sputtered precursors
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CZGS films with different Cu contents were prepared by sputtering method.

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Cu-rich films exhibit large grain size compared to those of Cu-poor films.

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Square resistance decrease from 14.2 to 1.3 k惟/鈻?with increasing grain size.

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Band gaps of the films decrease from 1.97 eV to 1.80 eV as Cu content increases.

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Reason for diverse values of Eg of CZGS based on the band theory is discussed.

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