A promising two-dimensional solar cell donor: Black arsenic-phosphorus monolayer with 1.54 eV direct bandgap and mobility exceeding 14,000 cm2 V−1 s−1
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- 作者：Meiqiu Xiea ; 1Author Vitae ; Shengli Zhanga ; 1Author Vitae ; Bo Caia ; 1Author Vitae ; Yong HuangaAuthor Vitae ; Yousheng ZouaAuthor Vitae ; Bin GuobAuthor Vitae ; Yu GuaAuthor Vitae ; Haibo Zenga ; zeng.haibo@njust.edu.cn" class="auth_mail" title="E-mail the corresponding authorAuthor Vitae
- 关键词：Excitonic solar cells ; Power conversion efficiency ; Black arsenic&ndash ; phosphorus monolayer ; First-principle calculations ; Type-II semiconductor heterojunction
- 刊名：Nano Energy
- 出版年：2016
- 出版时间：October 2016
- 年：2016
- 卷：28
- 期：Complete
- 页码：433-439
- 全文大小：2628 K
文摘
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Monolayer α–AsP as highly efficient donor for XSCs is proposed.
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α–AsP has direct gap (1.54 eV) and high electron mobility (14,380 cm2 V−1 s−1).
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We design a α–AsP/GaN XSC with maximum PCE of 22.1%.