- 作者：Manwen Yao ; 1 ; yaomw@tongji.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Zhen Su1 ; Pei Zou ; Jianwen Chen ; Fei Li ; Qian Feng ; Xi Yao
- 关键词：Alumina thin films ; Si doping ; Glass-like structure ; Breakdown strength ; Leakage current ; Dielectric constant and loss
- 刊名：Journal of Alloys and Compounds
- 出版年：2017
- 出版时间：5 January 2017
- 年：2017
- 卷：690
- 期：Complete
- 页码：249-255
- 全文大小：2000 K
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Dielectric Si-doped alumina thin films were prepared by sol-gel method.
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Al
class="glyphImg imgLazyJSB">Oclass="glyphImg imgLazyJSB">Si bonds and cation vacancies class="mathmlsrc">title="View the MathML source" class="mathImg" data-mathURL="/science?_ob=MathURL&_method=retrieve&_eid=1-s2.0-S0925838816321594&_mathId=si1.gif&_user=111111111&_pii=S0925838816321594&_rdoc=1&_issn=09258388&md5=ef85eda8458e8270ac077fafd3aa6410">class="imgLazyJSB inlineImage" height="18" width="22" alt="View the MathML source" title="View the MathML source" src="/sd/grey_pxl.gif" data-inlimgeid="1-s2.0-S0925838816321594-si1.gif">
class="mathContainer hidden">class="mathCode"> are produced by substitutive behavior.
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Excellent dielectric properties of Si-doping alumina thin films were achieved.
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The leakage current reduces two orders of magnitude when Si concentration is 2mol%.
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Breakdown strength increased by 93%, comparing with undoped alumina film.