Induction of ferroelectricity in nanoscale ZrO₂ thin films on Pt electrode without post-annealing

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• 作者：Bo-Ting Lin ; Yu-Wei Lu ; Jay Shieh ; ^{jayshieh@ntu.edu.tw" class="auth_mail" title="E-mail the corresponding author} ; Miin-Jang Chen ; ^{mjchen@ntu.edu.tw" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Zirconia ; Ferroelectricity ; Atomic layer deposition ; Thin films ; TEM
• 刊名：Journal of the European Ceramic Society
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：37
• 期：3
• 页码：1135-1139
• 全文大小：1861 K

文摘

Large stable ferroelectricity in nanoscale undoped zirconia (ZrO₂) thin films prepared without post-annealing has been demonstrated for the first time. Remanent polarizations up to 12 μC cm⁻² were obtained in the as-deposited ZrO₂ thin films prepared by remote plasma atomic layer deposition at 300 °C substrate temperature on the Pt electrode. Ferroelectric crystallization of the films was achieved without post-annealing, which is highly beneficial to the application of the films in non-volatile memories and ultralow-power nanoelectronics. The existence of the ferroelectric orthorhombic phase with noncentrosymmetric space group Pbc2₁ in the as-deposited ZrO₂ thin films was confirmed by high-resolution transmission electron microscopy.