A step-accurate model for the trapping and release of charge carriers suitable for the transient simulation of analog circuits
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- 作者：Husni Habal ; habalh@tum.de" class="auth_mail" title="E-mail the corresponding author ; Helmut Graeb
- 关键词：Reliability analysis ; Threshold voltage instabilities ; Device modeling ; Variability-aware simulation
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：June 2016
- 年：2016
- 卷：61
- 期：Complete
- 页码：17-23
- 全文大小：686 K
文摘
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A compact model is proposed to simulate the mechanism of charge trapping and release in MOSFET devices.
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Trap state is treated by a Markov process and governed by a differential equation that can be solved by a SPICE-like simulator.
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Electric input stimulus can be a general transient signal without clear cycles of stress and recovery, unlike the assumption of many models in the state of the art.
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Statistical variability in trap parameters is considered in the model.
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An operational amplifier is simulated using the new model and the proposed approach is compared with the state of the art.