Effect of Zn substitution on the sintering temperature and microwave dielectric properties of MgSiO₃-based ceramics

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• 作者：Atta Ullah ; Hanxing Liu ; ^{lhxhp@whut.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Hua Hao ; Javed Iqbal ; Zhonghua Yao ; Minghe Cao ; Qi Xu
• 关键词：Microwaves ; Dielectric materials/properties ; Grain size ; Morphology
• 刊名：Ceramics International
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：43
• 期：1
• 页码：484-490
• 全文大小：1787 K

文摘

Mg_1−xZn_xSiO₃ (x=0–0.3) ceramics were successfully synthesized by conventional solid-state methods and characterized by scanning electron microscopy, dispersive X-ray spectroscopy, and X-ray diffraction. The microstructures and microwave dielectric properties of Mg_1−xZn_xSiO₃ ceramics were systematically investigated. The lattice parameters of the samples with different Zn²⁺ contents were analyzed. When the Zn²⁺ content was increased from 0 to 0.15, the Q_uf_o of the sample increased from 103,453 GHz to a maximum 138,481 GHz. This also resulted in a significant lowering in the sintering temperature (90 °C). Monoclinic structured Mg_0.85Zn_0.15SiO₃ was detected without any secondary phase. In this study, a new combination of microwave dielectric properties (ε_r∼8.05, Q_uf_o∼138,481 GHz, τ_f∼−14 ppm/°C) was achieved for Mg_0.85Zn_0.15SiO₃ sample sintered at 1360 °C for 9 h. The prepared material with remarkable useful dielectric properties can be used for millimeter-wave applications.