Characteristics and electrical properties of reactively sputtered AlInGaN films from three different Al0.05InxGa0.95−xN targets with x=0.075, 0.15, and 0.25
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- 作者：Kaifan Lin ; Dong-Hau Kuo ; dhkuo@mail.ntust.edu.tw" class="auth_mail" title="E-mail the corresponding author
- 关键词：AlInGaN ; Thin film ; Sputtering ; Electrical property ; High turn-on voltage
- 刊名：Materials Science in Semiconductor Processing
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：57
- 期：Complete
- 页码：63-69
- 全文大小：908 K
文摘
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The sputtered AlInGaN films were deposited from cermet targets.
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Al competes with In to determine the electrical properties of the AlInGaN films.
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The turn-on voltage of the n-AlInGaN/p-Si diode was found to be 9.2 eV.