Studies on temperature variation in semiconductor waveguide through ARDP loss for nanophotonic applications

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• 作者：A. Panda^a ; P. Sarkar^b ; G. Palai^a ; ^{gpalai28@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; ^{g_pallai@yahoo.co.uk" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Temperature ; Semiconductor waveguide ; ARDP loss ; Transmitted intensity
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2016
• 出版时间：July 2016
• 年：2016
• 卷：127
• 期：13
• 页码：5439-5442
• 全文大小：618 K

文摘

Studies on temperature variation in InSb and InAs compound semiconductor waveguide through ARDP losses at wavelength 10.6 μm are reported in this work. Here ARDP losses are nothing but absorption, reflection, diffraction and polarization losses, which are frequently encountered as serious problem in optical semiconductors. In this paper these losses are analyzed with respect to different temperatures, which vary from 100 K to 240 K for InSb and 100 K to 220 K for InAs. Plane wave expansion method is used to obtain reflection losses, where Maxwell's curl equation is used to find absorption loss. Simulation is also made for diffraction and polarization efficiencies. Simulation results revealed that reflectance and diffraction efficiency increases with increasing of temperature, where polarization efficiency decreases with same temperature. Finally intensity transmitted through semiconductor decreases from 1.322 mW/m² to 1.296 mW/m² for InSb, where transmitted intensity increases from 2.218 mW/m² to 2.267 mW/m² for InAs with respect to above temperatures. Apart from this, it is seen that the variation of transmitted intensity with respect to temperature (100 K to 240 K for InSb and 100 K to 220 K for InAs) is nicely fitted with linear trend line (R² = 0.994 for InSb and R² = 0.992 for InAs), which leads to an accurate investigation of temperature in InSb and InAs compound semiconductor.