Effects of dopant contents on structural, morphological and optical properties of Er doped Ga2O3 films
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- 作者：Zhengwei Chena ; Xu Wanga ; Shinji Nodaa ; Katsuhiko Saitoa ; Tooru Tanakaa ; Mitsuhiro Nishioa ; Makoto Aritab ; Qixin Guoa ; guoq@cc.saga-u.ac.jp" class="auth_mail" title="E-mail the corresponding author
- 关键词：Gallium oxide ; Epitaxial growth ; PLD ; Thin films ; Morphological ; optical properties
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：February 2016
- 年：2016
- 卷：90
- 期：Complete
- 页码：207-214
- 全文大小：2128 K
文摘
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Er doped Ga2O3 films were deposited on sapphire substrates for the first time.
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Intense pure green emissions at 550 nm are clearly observed for the Er doped films.
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No peak shift at 550 nm is found with temperatures ranging from 77 to 450 K.
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The intensity of the Er doped Ga2O3 films has a smaller variation with temperature compared to GaN.