2D strain measurement in sub-10聽nm SiGe layer with dark-field electron holography
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- 作者：Van Vuong Hoanga ; d ; Young Ji Choa ; Jung Ho Yooa ; Jun-Mo Yanga ; jmyang@nnfc.re.kr" class="auth_mail" title="E-mail the corresponding author ; Sungha Choib ; Wooduck Jungb ; Yong Ho Choic ; Soon-Ku Hongd
- 关键词：Electron microscopy ; Electron holography ; Dark-field electron holography (DFEH) ; SiGe ; Strained silicon
- 刊名：Current Applied Physics
- 出版年：2015
- 出版时间：November 2015
- 年：2015
- 卷：15
- 期：11
- 页码：1529-1533
- 全文大小：1229 K
文摘
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We can measure 2D strain in sub-10 nm SiGe layer using dark-field electron holography.
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The strain distribution is clearly uniform and smooth over the whole SiGe layer.
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The measured results were compared to the X-ray diffraction (XRD) results.