ZT of 3D Si PnC can be enhanced to 0.66 which is about 26 times larger than ZT of porous Si and 100 times larger than that of bulk Si.
The electronic transport coefficients in 3D Si PnCs at 300 K are similar to those of bulk Si.
The lattice thermal conductivity of 3D Si PnCs is largely decreased by a factor of 500.
The 3D Si PnC is not only easy to be utilized than nanomaterials, but also much lower cost.