Static and dynamic properties of a GaAs p-i-n position-sensitive detector (PSD)
详细信息 查看全文
- 作者：Tzu-Hsuan HuangaAuthor Vitae ; Hao LoaAuthor Vitae ; Chieh LobAuthor Vitae ; Meng-Chyi WuaAuthor Vitae ; W.S. Lourc ; wslo@mail.ntou.edu.tw" class="auth_mail" title="E-mail the corresponding authorAuthor Vitae
- 关键词：GaAs ; p-i-n ; Photovoltaic ; Position ; Response time
- 刊名：Sensors and Actuators A: Physical
- 出版年：2016
- 出版时间：1 October 2016
- 年：2016
- 卷：249
- 期：Complete
- 页码：256-262
- 全文大小：1138 K
文摘
- class="listitem" id="list_lis0005">
- class="label">•
A position-sensitive detector being layer-compatible to an HBT is fabricated.
- class="label">•
GaAs-based p-i-n PSDs were reported with good sensing properties.
- class="label">•
A three-terminal configuration for a differential-type PSD is reported.
- class="label">•
Response times of the PSD in both the lateral and transverse photovoltaic mode are addressed.