The sputtering yields and roughness of W films irradiated with He⁺ at different energy and temperatures have been measured.

The sputtering yield increases by about one order of magnitude when E varies from 18–100 eV to ≥150 eV.

The W sputtering yield rapidly increases from 4.06 × 10⁻³ to 1.44 × 10⁻² W/He⁺ with increasing T from 293 to 973 K.

CAFM measurements show that plenty of nanometer-sized defects are formed at E ≥ 150 eV.​