Texturing of monocrystalline silicon wafers by HF-HCl-H2O2 mixtures: Generation of random inverted pyramids and simulation of light trapping in PERC solar cells
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Anisotropic etching and formation of pyramidal textures by ACIDIC etching mixtures.

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Unusual formation of random inverted pyramids by stirring of the etching mixture.

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High etch rates up to 13.3 nm s−1 at 20 °C (comparable to KOH-IPA at 75 °C).

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Lower reflectivities than KOH-IPA treated wafers at relevant etch depths.

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Better performance is shown by simulations of PERC solar cells.

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Potential for less cleaning efforts due to the high solubility of metals in HCl.

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