Molecular dynamics simulation of the interfacial thermal resistance between phosphorene and silicon substrate
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- 作者：Jingchao Zhanga ; Yang Hongb ; Mengqi Liuc ; Yanan Yued ; Qingang Xionge ; qgxiong@126.com" class="auth_mail" title="E-mail the corresponding author ; Giulio Lorenzinif ; giulio.lorenzini@unipr.it" class="auth_mail" title="E-mail the corresponding author
- 关键词：Phosphorene ; Interfacial thermal resistance ; Molecular dynamics simulation ; Graphene ; Silicene
- 刊名：International Journal of Heat and Mass Transfer
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：104
- 期：Complete
- 页码：871-877
- 全文大小：1902 K
文摘
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Interfacial thermal resistance (R) of phosphorene/silicon was modeled by MD.
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Interaction among phosphorene atoms was modeled by the Stillinger–Weber potential.
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R of phosphorene/silicon decreases with system temperature and coupling strength.
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R of phosphorene/silicon is about a quarter of that of graphene/silicon.
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R for phosphorene is more sensitive to external variations than that for silicene.