Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties
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- 作者：E. Papadomanolakia ; elpapad@physics.uoc.gr" class="auth_mail" title="E-mail the corresponding author ; C. Baziotib ; S.A. Kazazisa ; M. Androulidakic ; G.P. Dimitrakopulosb ; E. Iliopoulosa ; c
- 关键词：A1. Crystal Structure ; A1. High-Resolution X-ray diffraction ; A3. Molecular Beam Epitaxy ; B1. Nitrides
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 March 2016
- 年：2016
- 卷：437
- 期：Complete
- 页码：20-25
- 全文大小：2572 K
文摘
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RF-MBE growth of thick InGaN(0001) films on GaN/Al2O3 with content close to the miscibility gap.
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Effects of substrate temperature on the films' structural and electronic properties are studied.
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Lower growth temperatures lead to higher structural quality films with record-high mobilities.
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Increase growth temperature lead to deteriorated structures and phase separation.