Effect of carbon coverage, Ge thickness and growth temperature on Ge dots formation was investigated.

Small and dense dots were formed at the carbon coverage of 0.25 ML.

Dot density of about 1.8×10¹⁰ cm⁻² was achieved for Ge thickness and temperature of 4 nm and 400 ˚C, respectively.

Standard deviation of dot diameter was the lowest of 12 nm at Ge=4 nm.