Impact of metal electrode on charge transport behavior of metal-Gd2O3 systems
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- 作者：M.F. Wasiqa ; wasiq77@yahoo.com" class="auth_mail" title="E-mail the corresponding author ; M.Y. Nadeema ; Khalid Mahmoodb ; Muhammad Farooq Warsic ; Muhammad Azhar Khand ; azhar.khan@iub.edu.pk" class="auth_mail" title="E-mail the corresponding author ; azhar_manais@yahoo.com" class="auth_mail" title="E-mail the corresponding author
- 关键词：Gd2O3 ; Metal electrodes ; Hopping conduction ; Mott VRH ; Interface states
- 刊名：Journal of Alloys and Compounds
- 出版年：2015
- 出版时间：5 November 2015
- 年：2015
- 卷：648
- 期：Complete
- 页码：577-580
- 全文大小：418 K
文摘
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Charge transport mechanism in metal-Gd2O3-metal systems in the temperature range 290–380 K.
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Al, Cu, Cr and Au metal electrodes were fabricated on 80 nm Gd2O3 thin film by E.B evaporation.
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Mott VRH is responsible for conduction behavior in all systems for entire temperature range.
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A strong correlation between transport properties and metal work function has been observed.
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蟽 decreased from 2.9 × 10−5 to 1.8 × 10−11 S/cm as the metal 蠁 increased from 4 to 5.1 eV for Al to Au.