DC characteristics and analog/RF performance of novel polarity control GaAs-Ge based tunnel field effect transistor
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- 作者：Kaushal Nigam ; kaushal.nigam@iiitdmj.ac.in" class="auth_mail" title="E-mail the corresponding author ; Pravin Kondekar pn.kondekar@iiitdmj.ac.in" class="auth_mail" title="E-mail the corresponding author ; Dheeraj Sharma dheeraj@iiitdmj.ac.in" class="auth_mail" title="E-mail the corresponding author
- 关键词：Polarity bias ; Band to band tunneling ; Hetero tunnel field effect transistor
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：April 2016
- 年：2016
- 卷：92
- 期：Complete
- 页码：224-231
- 全文大小：1883 K
文摘
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A new hetero electrically doped TFET is designed.
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Proposed hetero electrically doped TFET provides high ON state current.
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High frequency performance analysis of hetero electrically doped TFET is performed.
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The proposed work would be beneficial for low power high frequency applications.