Temperature sensitivity analysis of polarity controlled electrostatically doped tunnel field-effect transistor
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- 作者：Kaushal Nigam kaushal.nigam@iiitdmj.ac.in" class="auth_mail" title="E-mail the corresponding author ; Sunil Pandey ; sunilpandey@iiitdmj.ac.in" class="auth_mail" title="E-mail the corresponding author ; P.N. Kondekar pnkondekar@iiitdmj.ac.in" class="auth_mail" title="E-mail the corresponding author ; Dheeraj Sharma dheeraj@iiitdmj.ac.in" class="auth_mail" title="E-mail the corresponding author
- 关键词：Band to band tunneling (BTBT) ; Polarity bias ; Random dopant fluctuation (RDF) ; Sensitivity
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：97
- 期：Complete
- 页码：598-605
- 全文大小：1883 K
文摘
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Temperature sensitivity analysis of a polarity controlled electrostatically doped tunnel field-effect transistor (ED-TFET) is investigated in this paper.
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Different performance metrics and analog/RF figure-of-merits were analysed for both conventional and proposed devices.
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ATLAS device simulation shows variation in ON-state current in ED-TFET is almost temperature independent due to electrostatically doped mechanism.
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Above room temperature, the ION, IOFF, and SS of ED-TFET are less sensitive towards temperature variation as compared to the conventional TFET.