Extending the limits of screen-printed metallization of phosphorus- and boron-doped surfaces

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• 作者：Sabrina Werner ; ^{sabrina.werner@ise.fraunhofer.de" class="auth_mail" title="E-mail the corresponding author} ; Elmar Lohmü ; ller ^{elmar.lohmueller@ise.fraunhofer.de" class="auth_mail" title="E-mail the corresponding author} ; Andreas Wolf ^{andreas.wolf@ise.fraunhofer.de" class="auth_mail" title="E-mail the corresponding author} ; Florian Clement ^{florian.clement@ise.fraunhofer.de" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Silicon solar cells ; Specific contact resistance ; Screen printing metallization ; Phosphorus ; Boron ; Doping ; Doping profile
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：158
• 期：part_P1
• 页码：37-42
• 全文大小：1221 K

文摘

This work demonstrates low-ohmic electrical contacting of phosphorus- and boron-doped surfaces (textured and passivated) with maximum dopant concentrations of only N_max≈2·10¹⁹ cm⁻³ by screen-printed and fired metallization. The achieved results using commercially available metallization pastes allow for a substantial extension of the limits in which screen-printed and fired metallization can be applied for solar cell fabrication. Despite the very low N_max, the investigations reveal reasonably low specific contact resistances of ρ_C=(8±3) mΩ cm² for a silver paste on alkaline textured, phosphorus-doped, and SiN_x passivated surfaces, and ρ_C=(3.7±0.7) mΩ cm² for a silver aluminum paste on alkaline textured, boron-doped, and Al₂O₃/SiN_x passivated surfaces.