Simplified Fabrication of n-type Cz-Si HIP-MWT+ Solar Cells with 20% Efficiency Using Laser Structuring

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• 作者：Elmar Lohmü ; ller^a ; ^{elmar.lohmueller@ise.fraunhofer.de" class="auth_mail" title="E-mail the corresponding author} ; Sabrina Werner^a ; Stephan Maus^a ; Andreas Brand^a ; Ulrich Jä ; ger^a ; ^b ; Jan Nekarda^a ; Florian Clement^a
• 关键词：n-type silicon ; metal wrap through ; MWT ; HIP-MWT+ ; solar cells
• 刊名：Energy Procedia
• 出版年：2016
• 出版时间：August 2016
• 年：2016
• 卷：92
• 期：Complete
• 页码：738-742
• 全文大小：356 K

文摘

We present 6-inch n-type Cz-Si metal wrap through (MWT) solar cells with screen-printed and fired contacts achieving energy conversion efficiencies of 20%. In order to decrease the occurrence of leakage currents under forward operation to a minimum after applying reverse bias load, the structuring of the rear side phosphorus doping in the area of the external p-type contacts is necessary. The fabrication of these so-called n-type high-performance MWT+ (n-HIP-MWT+) solar cells is considerably simplified by using laser processes to locally structure the rear side phosphorus doping. The n-HIP-MWT+ cells fabricated with laser structuring achieve the same peak energy conversion efficiency of 20% as conventionally fabricated ones, which are manufactured using an elaborate inkjet-based masking process prior to phosphorus diffusion. The loss of cell efficiency after reverse biasing is decreased to – 0.1%_abs independent of the structuring method, and is three times smaller than the one observed for cells without structuring of the phosphorus doping.