Towards understanding the characteristics of Ag-Al spiking on boron-doped silicon for solar cells
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- 作者：Nico Wö ; hrle ; nico.woehrle@ise.fraunhofer.de" class="auth_mail" title="E-mail the corresponding author ; Elmar Lohmü ; ller1 ; elmar.lohmueller@ise.fraunhofer.de" class="auth_mail" title="E-mail the corresponding author ; Johannes Greulich2 ; johannes.greulich@ise.fraunhofer.de" class="auth_mail" title="E-mail the corresponding author ; Sabrina Werner3 ; sabrina.werner@ise.fraunhofer.de" class="auth_mail" title="E-mail the corresponding author ; Sebastian Mack4 ; sebastian.mack@ise.fraunhofer.de" class="auth_mail" title="E-mail the corresponding author
- 关键词：Dark saturation current density ; Metallization ; Boron-doped emitter ; Sentaurus simulation ; QSSPC ; Spiking
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2016
- 出版时间：March 2016
- 年：2016
- 卷：146
- 期：Complete
- 页码：72-79
- 全文大小：1252 K
文摘
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We examine the impact of metal spikes on B-emitters on metal contact recombination.
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A three dimensional model with the QSSPC technique is used for simulation.
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Shallow spikes have minor effect on j0,met, deep spikes increase j0,met abruptly.
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Spikes should not penetrate a critical zone starting 150 nm above the pn-junction.
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Deeper profiles are more robust against deep spikes, as samples confirm.