Ohmic-like contact formation at the rear interface between Cu(In,Ga)Se2 and ZnO:Al in a lift-off Cu(In,Ga)Se2 solar cell
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- 作者：Jakapan Chantana ; jakapan@fc.ritsumei.ac.jp" class="auth_mail" title="E-mail the corresponding author ; Hiroyuki Arai ro0010ss@ed.ritsumei.ac.jp" class="auth_mail" title="E-mail the corresponding author ; Yutaka Niizawa ro0024xh@ed.ritsumeiac.jp" class="auth_mail" title="E-mail the corresponding author ; Takashi Minemoto minemoto@se.ritsumei.ac.jp" class="auth_mail" title="E-mail the corresponding author
- 关键词：Copper indium gallium selenide ; Lift-off solar cells ; Ohmic-like contact ; Trap-assisted tunneling recombination ; Bi-layers of back electrode
- 刊名：Thin Solid Films
- 出版年：2016
- 出版时间：1 October 2016
- 年：2016
- 卷：616
- 期：Complete
- 页码：17-22
- 全文大小：1078 K
文摘
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Lift-off Cu(In,Ga)Se2 (CIGS) solar cells are fabricated.
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Ohmic-like contact between CIGS and ZnO:Al is formed through sputtering damage.
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Sputtering damage is evaluated by photoluminescence measurement.
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Efficiency of lift-off CIGS solar cell is 70% of that of substrate-type CIGS solar cell.