Physical properties of Cu(In,Ga)Se2 film on flexible stainless steel substrate for solar cell application: A multi-layer precursor method
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- 作者：Jakapan Chantanaa ; jakapan@fc.ritsumei.ac.jp" class="auth_mail" title="E-mail the corresponding author ; Daisuke Hironiwaa ; hironiwa@fc.ritsumei.ac.jp" class="auth_mail" title="E-mail the corresponding author ; Taichi Watanabeb ; taichi_watanabe@gg.nitto.co.jp" class="auth_mail" title="E-mail the corresponding author ; Seiki Terajib ; seiki_teraji@gg.nitto.co.jp" class="auth_mail" title="E-mail the corresponding author ; Takashi Minemotoa ; minemoto@se.ritsumei.ac.jp" class="auth_mail" title="E-mail the corresponding author
- 关键词：Copper indium gallium selenide ; Precursor deposition temperature ; Cu2&minus ; xSe phase ; Ordered vacancy compound ; [Cu]/([In]+[Ga]) ; [Ga]/([In]+[Ga])
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2015
- 出版时间：December 2015
- 年：2015
- 卷：143
- 期：Complete
- 页码：510-516
- 全文大小：2977 K
文摘
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Cu(In,Ga)Se2 film on stainless steel (SUS) substrate is fabricated.
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Impact of precursor deposition temperature is investigated.
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Cu(In,Ga)Se2 film with large grain is obtained with optimized [Cu]/([In]+[Ga]).
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Deep-defect levels in Cu(In,Ga)Se2 film are examined and identified.
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17.5%-efficient solar cell on flexible SUS substrate is achieved.