Incorporation of low energy activated nitrogen onto HOPG surface: Chemical states and thermal stability studies by in-situ XPS and Raman spectroscopy
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- 作者：Maneesh Chandran ; maneesh@tx.technion.ac.il" class="auth_mail" title="E-mail the corresponding author ; maneeshcn@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Michal Shasha ; Shaul Michaelson ; Alon Hoffman ; choffman@tx.technion.ac.il" class="auth_mail" title="E-mail the corresponding author
- 关键词：Graphite ; Nitrogen plasma ; N2+ implantation ; Thermal stability
- 刊名：Applied Surface Science
- 出版年：2016
- 出版时间：30 September 2016
- 年：2016
- 卷：382
- 期：Complete
- 页码：192-201
- 全文大小：3301 K
文摘
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Nitrogen incorporation onto HOPG was carried out by RF N2 plasma and N2+ implantation.
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Chemical state analyses of the modified HOPG surface were compared by in-situ XPS.
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Formation of chemical bonding states are influenced by the process of nitridation.
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N+ implantation process resulted in a high level of defects to the uppermost surface.
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RF N2 plasma process incorporated stable nitrogen species with less surface defects.