Sputtered Si3N4 and SiO2 are investigated as electron barrier layer for I−/I−3 and TMTU/TMFDS2+ in electrochromic devices.
Loss currents and optical densities are compared for I−/I−3 and TMTU/TMFDS2+ redox systems.
A significant decrease in loss current is achieved with Si3N4 for both redox electrolytes.