- 作者：Rui Li ; rli_lynu@163.com" class="auth_mail" title="E-mail the corresponding author ; Zhong-Li Liu ; Yanhong Gu ; Weiying Zhang ; Yonggang Tan
- 关键词：Silicene nanoribbons ; Chemical functionalization ; Electronic properties ; Quantum confinement
- 刊名：Physica E: Low-dimensional Systems and Nanostructures
- 出版年：2016
- 出版时间：May 2016
- 年：2016
- 卷：79
- 期：Complete
- 页码：152-159
- 全文大小：2246 K
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O- and OH-passivation on silicene edges are energetically favorable over H-passivation.
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Different from the resistence of π-bonds saturation on silicene surface, the oxidation on silicene edges is much easier due to the stronger chemical reactivity of σ-bonds.
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Counting the two new “atom-chains” formed between neighboring OHs on ASiNR-OH edges, the band gaps of O- and OH-functionalized ASiNRs follow the same hierarchy of class="mathmlsrc">class="formulatext stixSupport mathImg" data-mathURL="/science?_ob=MathURL&_method=retrieve&_eid=1-s2.0-S1386947715303404&_mathId=si0001.gif&_user=111111111&_pii=S1386947715303404&_rdoc=1&_issn=13869477&md5=1c24b712388132e15e60084baba1ac40" title="Click to view the MathML source">Δ3p>Δ3p−1>Δ3p−2class="mathContainer hidden">class="mathCode">.