Electroless deposition of NiCrB diffusion barrier layer film for ULSI-Cu metallization

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• 作者：Yuechun Wang^a ; Xiuhua Chen^a ; ^{chenxh@ynu.edu.cn} ; Wenhui Ma^b ; Yudong Shang^a ; Zhengtao Lei^a ; Fuwei Xiang^a
• 关键词：Electroless deposition ; NiCrB thin film ; Diffusion barrier layer ; Failure mechanism ; Annealing
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：28 February 2017
• 年：2017
• 卷：396
• 期：Complete
• 页码：333-338
• 全文大小：1771 K
• 卷排序：396

文摘

In this paper, the electroless deposited NiCrB thin film was mainly in the form of NiB, CrB2 compounds and elementary Ni. The sheet resistance of NiCrB thin film was 3.043 Ω/□, it is smaller than that of the widely used Ta, TaN and TiN diffusion barrier layers. Annealing experiments showed that the failure temperature of NiCrB thin film regarding Cu diffusion was 900 °C. NiCrB barrier layer crystallized after 900 °C annealing, Cu grains arrived at Si-substrate through grain boundaries, resulting in the formation of Cu3Si. Eelectroless deposited NiCrB film also had good oxidation resistance, it is expected to become an anti-oxidant layer of copper interconnection.