Domains of molecular beam epitaxial growth of Ga(In)AsBi on GaAs and InP substrates
详细信息 查看全文
- 作者：Wolfgang Bennarndt ; wolfgang.bennarndt@wsi.tum.de" class="auth_mail" title="E-mail the corresponding author ; Gerhard Boehm ; Markus-Christian Amann
- 关键词：A3. Molecular beam epitaxy ; B1. Alloys ; B1. Bismuth compounds ; B2. Semiconducting III&ndash ; V materials
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：15 February 2016
- 年：2016
- 卷：436
- 期：Complete
- 页码：56-61
- 全文大小：1718 K
文摘
- •
Bismuth containing III–V semiconductor alloys are promising for optoelectronic applications.
- •
The challenges of bismide growth are the formation of defects and spinoidal decomposition.
- •
Growth of bismides can be allocated to a variety of growth domains.