The transport phenomena during the growth of ZnTe crystal by the temperature gradient solution growth technique

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• 作者：Liying Yin^a ; ^b ; Wanqi Jie^a ; ^b ; ^{jwq@nwpu.edu.cn} ; Tao Wang^a ; ^b ; Boru Zhou^a ; ^b ; Fan Yang^a ; ^b
• 关键词：A2. Single crystal growth ; A2. Growth from high temperature solutions ; A1. Computer simulation ; A1. Mass transfer ; B2. Semiconducting II-VI materials ; B3. Terahertz devices
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 March 2017
• 年：2017
• 卷：461
• 期：Complete
• 页码：16-24
• 全文大小：1869 K
• 卷排序：461

文摘

Growth of ZnTe crystal by TGSG technique is numerically simulated. Reasons for the slow mass transfer are explained. The growth interface changes into two distinct parts during the growth. The inner part of the ingot is predicted to have worse quality than that of the outer part. High temperature gradient can facilitate the mass transfer and increase the growth rate.