Physical properties of highly crystalline CIS layer prepared using single phase electrodeposition and low temperature RTP annealing

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• 作者：H. Saidi^a ; ^{houdasaiidi@yahoo.fr} ; M.F. Boujmil^a ; B. Durand^b ; M. Bouaï ; cha^a
• 关键词：CIS ; Electrodeposition ; RTP ; Chalcopyrite ; Mott-Schottky ; Optical model
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：25 February 2017
• 年：2017
• 卷：695
• 期：Complete
• 页码：779-786
• 全文大小：1345 K
• 卷排序：695

文摘

CIS layers were synthesized using single phase electrodepostion and RTP annealing. Highly crystalline CIS without secondary phases was obtained at 250 °C. Effect of annealing temperature on physical proprieties of CIS films was investigated. Adequate model was used to extract optical parameters.