Evolution of grain structure and recombination active dislocations in extraordinary tall conventional and high performance multi-crystalline silicon ingots
Firstly grown 710 mm tall silicon ingots by successive growth of several G1 ingots. Detailed analysis of grain structure parameters and recombination active area. Grain structures of HPM and conventional silicon align each other after 300 mm growth. Recombination active area also becomes equal at taller ingot heights.