Kinetics of the laser-induced solid phase crystallization of amorphous silicon—Time-resolved Raman spectroscopy and computer simulations
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- 作者：J. Očená ; &scaron ; ek ; ocenasek@ntc.zcu.cz" class="auth_mail" title="E-mail the corresponding author ; P. Nová ; k ; L. Pru&scaron ; á ; ková
- 刊名：Applied Surface Science
- 出版年：2017
- 出版时间：15 January 2017
- 年：2017
- 卷：392
- 期：Complete
- 页码：867-871
- 全文大小：1073 K
文摘
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Mathematical model for crystallization in a non-uniform temp. field was designed.
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Quantitative analyses of Raman spectra are presented.
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Analyses of the crystallization kinetics using laser irradiation are introduced.
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Laser-induced crystallization kinetics of a-Si thin film was analyzed in detail.