TCT and test beam results of irradiated magnetic Czochralski silicon (MCz-Si) detectors

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作者：P. Luukka ; J. Hä ; rkö ; nen ; T. Mä ; enpä ; ä ; B. Betchart ; S. Czellar ; R. Demina ; A. Furgeri ; Y. Gotra ; M. Frey ; F. Hartmann ; S. Korjenevski ; M.J. Kortelainen ; T. Lampé ; n ; B. Lederm
关键词：Magnetic Czochralski silicon ; Double junction ; Beam test ; Transient current technique
刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
出版年：2009
出版时间：1 June 2009
年：2009
卷：604
期：1-2
页码：254-257
全文大小：195 K

文摘

s language=""en"">Pad and strip detectors processed on high resistivity n-type magnetic Czochralski silicon (MCz-Si) were irradiated to several different fluences with protons. The pad detectors were characterized with the transient current technique (TCT) and the full-size strip detectors with a reference beam telescope and a 225 GeV muon beam. The TCT measurements indicate a double junction structure and space charge sign inversion in MCz-Si detectors after 6×1014sup> 1 MeV neqsub>/cm2sup> fluence. In the beam test a signal-to-noise (S/N) ratio of 50 was measured for a non-irradiated MCz-Si sensor, and a S/N ratio of 20 for the sensors irradiated to the fluences of 1×1014sup> 1 and 5×1014sup> 1 MeV neqsub>/cm2sup>.s>

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