Behavior of volatile dopants (P, Sb) in Czochralski silicon growth

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• 作者：M. Porrini ; R. Scala ; V.V. Voronkov
• 关键词：A2. Czochralski method ; B2. Semiconducting silicon ; A1. Doping ; A2. Industrial Crystallization
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：460
• 期：Complete
• 页码：13-15
• 全文大小：419 K
• 卷排序：460

文摘

The evaporation of volatile dopants – Sb and P – from the silicon melt is studied. For the heavily doped crystals the evaporation rate is very similar for both P and Sb. The rate-limiting step for the evaporation process is the transport through the melt. For low Phosphorus concentration the evaporation rate becomes negligible.