High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs
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- 作者：Hiroaki Yoda ; Tatsuya Kishi ; Toshihiko Nagase ; Masatoshi Yoshikawa ; Katsuya Nishiyama ; Eiji Kitagawa ; Tadaomi Daibou ; Minoru Amano ; Naoharu Shimomura ; Shigeki Takahashi ; Tadashi Kai ; Masahiko Nakayama ; Hisanori Aikawa ; Sumio Ikegawa ; Makoto Nagamine ; Junichi Ozeki ; Shigemi Mizukami ; Mikihiko Oogane
- 关键词：Spin transfer torque ; MRAM ; Perpendicular ; MTJ ; Critical switching currents ; Damping constant ; Fe alloy ; Gbits density
- 刊名：Current Applied Physics
- 出版年：2010
- 出版时间：January 2010
- 年：2010
- 卷：10
- 期：1, Supplement 1
- 页码：e87-e89
- 全文大小：274 K
文摘
An Fe-based perpendicular alloy with small damping constant was applied to an MTJ storage layer and small switching current of 9 μA was obtained for a write current width of 5 ms. The efficiency of spin transfer torque writing was proved to be higher than those for in-plane MTJs. The estimated Ic for the MTJ with 50 nsec pulse width is lower than 20 μA and smaller than the drive currents of CMOS transistor at Gbits density.