InN nanopillars grown from In-rich conditions by migration enhanced afterglow technique

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• 作者：Penka T. Terziyska ; Kenneth Scott Alex ; er Butcher ; Daniela Gogova ; Dimiter Alex ; rov ; Peter Binsted ; Guosheng Wu
• 关键词：Indium nitride ; Nanopillars ; Indium rich conditions ; Migration enhanced CVD
• 刊名：Materials Letters
• 出版年：2013
• 出版时间：1 September, 2013
• 年：2013
• 卷：106
• 期：Complete
• 页码：155-157
• 全文大小：645 K

文摘

Self-catalytic growth of InN nanopillars on (0001) sapphire is reported under In-rich conditions, using the Migration Enhanced Afterglow (MEAglow) growth technique. The nanopillars are up to 2 ¦Ìm in length and 100-200 nm in diameter, terminated with an In-metal droplet on the top, with growth direction and preferred orientation along the InN c-axis. The shape of the nanopillars is cylindrical and their diameter is determined by the diameter of the In-metal droplet. X-ray diffraction measurements indicate the presence of both cubic and hexagonal InN, with very good crystalline quality. The room temperature Raman spectrum shows the presence of the A₁(TO), E₂(high) and A₁(LO) phonon modes of the hexagonal InN.