Film strain and compositional changes in thermally nitrided silicon dioxide thin films

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• 作者：Dasgupta ; Anindya ; Jin ; Dong-Un ; Takoudis ; Christos G.
• 关键词：Nitrided silicon oxide ; Film strain ; Infrared spectroscopy ; Thermal processing
• 刊名：Thin Solid Films
• 出版年：2005
• 出版时间：January 24, 2005
• 年：2005
• 卷：472
• 期：1-2
• 页码：270-274
• 全文大小：311 K

文摘

The nature of the SiaaaO bonds, composition, and film strain changes in thermally nitrided silicon dioxides in NH₃ at 1000 aaC and 1 atm is investigated with Fourier transform infrared spectroscopy and spectroscopic ellipsometry. Shifts of the transverse optical and longitudinal optical phonons of O in SiaaaOaaaSi bridging bonds are the results of both compositional and strain within the silicon dioxide matrix. Red shifts during the initial nitridation period are followed by blue shifts at longer nitridation times. Red shifts can be explained by nitrogen incorporation and strain accumulation, while bulk film strain relaxation in nitrided oxides is most likely responsible for the blue shifts.